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Study of the Absorptance of a Thin Layer of the Vanadium Dioxide

Affiliations

  • Physics Laboratory of Solid FSDM Fès, University Sidi Mohamed Ben Abdellah, Morocco
  • Laboratory of the Thin Layers and Surface Treatment by Plasma ENS-Fès, Morocco

Abstract


Objectives: This work shows the study of the evolution of the CoeffA absorptance of a thin layer of VO2 according to the energy of the incidental photon in order to deduce its optical response in the average I.R, the close I.R, the remote I.R, the visible spectrum and the U.V. Methods/Statistical Analysis: We have used the model of Drude for the thin layer of VO2 in the metal state, and the model of Lorentz for the semiconductor state of this thin layer in order to simulate the optical functions of this material, and in particular the absorptance. An analysis of the maxima and minima of this optical function was made in the two states, semiconductor and metal, according to the model used. Findings: In the semiconductor state of the vanadium dioxide, we noticed that the number of oscillators of Lorentz influences clearly the description of the absorptance and these specific points: maxima and minima. Indeed, the model with seven oscillators is strongly maintained if compared to that of four oscillators. Whereas in the metal state of this thin layer of the vanadium dioxide, the model of Drude with only one oscillator describes the variation of CoeffA according to the energy ω (ev) of the incidental photons in the spectrum from the infra-red to the ultraviolet ray. Application/Improvements: This general study allows the incorporation of this intelligent material in various technological nano applications, like the solar air-conditioners and the thermal pumps.

Keywords

Metal State, Semiconductor State, Thin Layer, The Absorptance, The Infra-Red, Vanadium Dioxide.

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References


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