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Low Temperature Synthesis and Annealing effect of Transparent ZnO Thin Films on ITO Substrate by Sol-Gel Method


  • Department of Electronics, S.N.R. Sons College, Coimbatore - 641006, Tamil Nadu, India
  • Department of Physics, Government Arts College, Udhagamandalam - 643 002, Tamil Nadu, India


Objectives: Transparent Zinc oxide (ZnO) thin films to be prepared and annealed on the Indium tin oxide - ITO substrate using simple solution gel dip coating technique. Methods/Analysis: Thin films have been carried out by different characterization techniques such as X-ray diffractometer - XRD, Scanning Electron Microscopy - SEM, Energy dispersive analysis - EDAX, UV spectroscopic and FTIR spectroscopy. In the contemporary work, the ZnO films have been prepared on ITO substrate by dipping in the solution and annealed at the 300 °C. Findings: XRD pattern reveals that the annealed thin film is standard wurtzite zinc oxide hexagonal structure. SEM Morphological studies have been investigated using scanning electron microscopy and the elemental analysis confirmed by EDAX. Optical measurement shows the greatly transparent and the thin films are direct energy gap Eg of 3.70eV. FTIR confirm the metal oxide bond in the molecular structure. Novelty/Improvement: This research work helps for the future researcher’s preparation of undoped Zinc oxide thin film for solar cell applications.


ITO Substrate, Sol-Gel Method, ZnO Thin Film

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