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Modeling and Simulation of Gate Engineered Gate All-Around MOSFET for Bio-Molecule Detection

Affiliations

  • Department of Electronics and Instrumentation Engineering, JJ College of Engineering and Technology, Ammapettai, Poolangulathupatti (Post), Trichy - 620 009, Tamil Nadu, India
  • Department of ECE, SASTRA University, Tirumalaisamudram, Thanjavur - 613 401,Tamil Nadu, India

Abstract


Objectives: In this paper, modeling and simulation of a triple material gate stack gate all around MOSFET biosensor for the detection of biomolecules under dry environment conditions has been carried out. Method: A nanocavity is formed in the proposed device and its surface potential values are estimated by solving 2D Poisson and Schrödinger equations using Leibmann’s iteration method. The surface potential values are obtained for both the presence and absence of biomolecules. To the best of our knowledge, the effect of engineering on the gate stack gate all around MOSFET biosensor characteristics has been studied for the first time and its characteristics such as sensitivity and drain current are obtained. Findings: It is found that the implementation of gate engineering in the gate stack gate all around MOSFET improves the characteristics of the device. Improvements: The proposed device may be improved by implementing the device as an optical biosensor for detection of biomolecules.

Keywords

Bio-Molecule Detection, Gate All Around MOSFET, Gate Engineering, Modelling, Simulation.

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References


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