Abstract

An ensemble Monte Carlo simulation have been carried out to study temperature and doping dependencies of electron drift velocity in ZnS, GaN and 6H-SiC. We study how electrons, initially in thermal equilibrium, drift under the action of an applied electric field within bulk of these materials. Calculations are made using a non-parabolic effective mass energy band model, Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab-initio band models. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to 600 kVm-1, appropriate to the gate-drain fields expected within an operational field effect transistor. The electron drift velocity relaxes to the saturation value of about 1.5×105 ms-1 within 3 ps, for all crystal structures.

Keywords: Ensemble Monte Carlo, drift velocity, transient velocity, pseudopotential.