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Issue No:8 Vol.3 |
August-2010 |
ISSN: 0974-5645 |
| RESEARCH ARTICLES |
Viewers & PDF |
| 2. Arabic speech segmentation: Automatic verses manual method and zero crossing measurements. Mohammed A. Al-Manie, Mohammed I. Alkanhal and Mansour M. Al-Ghamdi. Indian J.Sci.Technol. Vol. 3, Issue 12, pp: 1134-1138. Domain site: http://www.indjst.org. |
 
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- Abstract An ensemble Monte Carlo simulation is used to compare bulk electron transport in wurtzite phase GaInN, AlGaN and
AlInN materials. Electronic states within the conduction band valleys at theΓ, U and K are represented by non-parabolic
ellipsoidal valleys centered on important symmetry points of the Brillouin zone. For all materials it is found that electron
velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to
each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has
also been simulated with the sudden application of fields up to ∼5×107 Vm-1, appropriate to the gate-drain fields
expected within an operational field effect transistor. The electron drift velocity relaxes to the saturation value of
∼1.5×105 ms-1 with in 4 ps for all crystal structures. The steady-state and transient velocity overshoot characteristics are
in fair agreement with other recent calculations.
- Keywords: Brillouin zone, gate-drain, transient, critical field, drift velocity, semiconductor
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