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Issue No:6, Vol.3 |
June - 2010 |
ISSN: 0974-5645 |
| RESEARCH ARTICLES |
Viewers & PDF |
| 6. The role of nano particles (Si) in gate dielectric. Aref Sadeghi Nik, Ali Bahari, Abdol Ghaffar Ebadi, Adel Sadeghi Nik and Abbas Ghasemi-Hamzekolaee (2010) Indian J.Sci.Technol. Vol. 3, Issue 6, pp: 634-636. Domain site: http://www.indjst.org. |
 
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- Abstract
The progressively decreasing feature size of the circuit components, particles and electronic devices has tremendously
increased the need for studying and investigating the nano structural properties of materials. We have grown titanium
oxide on the Si (100) substrate at 500°C and one atmosphere pressure. Some researchers have believed that an
intermediate silicon oxide film can be made between titanium oxide film and substrate but which turned to be of less
use. We added silicon nano particles (100 nm) into titanium oxide film that could modify the titanium oxide
morphology as revealed in x-ray diffraction patterns and scanning electron microscopy images. The obtained results
show that the existence of silicon nano particles in titanium oxide film resulted in better stability. The improved film
can thus be used as a good gate dielectric film for the future CMOS (Complementary metal oxide semiconductor)
devices.
- Keywords: Nanotechnology, nano transistor, nano particle, gate dielectric.
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