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Issue No:1 Vol.4 |
January -2011 |
ISSN: 0974-5645 |
| RESEARCH ARTICLES |
Reders.....Save |
| 1.Modeling of a 6H-SiC MESFET for high-power and high-gain applications. H. Arabshahi and M. Rezaee Rokn-Abadi. , Indian J.Sci.Technol. Vol. , Issue , pp: 1-3. |
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- Abstract
A Monte Carlo simulation has been used to model steady state and transient electron transport in 6H-SiC field effect
transistor. The simulated device geometries and doping are matched to the nominal parameters described for the
experimental structures as closely as possible and the predicted I-V and transfer characteristics for the intrinsic devices
show fair agreement with the available experimental data. Simulations of the effect of modulating the gate bias have
also been carried out to test the device response and derived the frequency bandwidth. Value of 90±10 GHz has been
derived for the intrinsic current gain cut-off frequency of the 6H-SiC MESFETs.
- Keywords: Steady-state, transient, cut-off frequency, frequency bandwidth.
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